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Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN, heterostructure, MOVPE, uniformity, bowing,
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For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.