High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Masahiro SAKAI  Kenta ASANO  Subramaniam ARULKUMARAN  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  Tomohiko SHIBATA  Mitsuhiro TANAKA  Osamu ODA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2071-2076
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN,  HEMT,  AlN,  template,  

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We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.