Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

Takashi INOUE  Yuji ANDO  Kensuke KASAHARA  Yasuhiro OKAMOTO  Tatsuo NAKAYAMA  Hironobu MIYAMOTO  Masaaki KUZUHARA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2065-2070
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN heterojunction FET,  short channel,  delay-time analysis,  series resistance,  electron high-field velocity,  

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High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (Lg) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance RS + RD are properly taken into account. By applying the new scheme to a device with Lg=0.25 µm, we obtained an effective high-field electron velocity of 1.75107 cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.