A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si

Guangyuan ZHAO  William SUTTON  Dimitris PAVLIDIS  Edwin L. PINER  Johannes SCHWANK  Seth HUBBARD  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2027-2031
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN,  gas sensor,  Schottky diode,  sensitivity,  

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Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300 (530%, at 160 ppm CO in N2) and fast response comparable with SnO2 sensors. A two-region linear regime was observed for the dependence of sensitivity on CO concentration. GaN sensors on Si substrate offer the possibility of integration with Si based electronics. The gas sensors show slow response with time, the change of material properties possibly in the presence of large thermal stress.