Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector

Toshinobu MATSUNO  Atsuhiko KANDA  Tsuyoshi TANAKA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2022-2026
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
SiGe HBT,  power amplifier,  selectively ion implanted collector,  collector break down voltage,  

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We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.