Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium

Jimpei TABATA
Kouichi HIRANAKA
Tohru SAITOH
Takeshi NAGASHIMA
Masanori HANGYO

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.10    pp.1994-1999
Publication Date: 2003/10/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
terahertz,  SiGe,  conductivity,  spectroscopy,  

Full Text: PDF>>
Buy this Article


Summary: 
The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement. In the present experiment, the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough, this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.