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RF Performance of Diamond Surface-Channel Field-Effect Transistors
Hitoshi UMEZAWA Shingo MIYAMOTO Hiroki MATSUDAIRA Hiroaki ISHIZAKA Kwang-Soup SONG Minoru TACHIKI Hiroshi KAWARADA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
diamond, hydrogen-terminated surface channel, MESFET, MISFET, cut-off frequency, mobility, CaF2,
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RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.