RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi UMEZAWA  Shingo MIYAMOTO  Hiroki MATSUDAIRA  Hiroaki ISHIZAKA  Kwang-Soup SONG  Minoru TACHIKI  Hiroshi KAWARADA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.10    pp.1949-1954
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
diamond,  hydrogen-terminated surface channel,  MESFET,  MISFET,  cut-off frequency,  mobility,  CaF2,  

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RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.