Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool

Juergen RAMM  Hans von KANEL  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.1935-1942
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
epitaxy,  virtual substrate,  strained silicon,  low temperature,  pre-epi clean,  plasma,  

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A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.