A Novel RF CMOS Active Inductor

Jyh-Neng YANG  Yi-Chang CHENG  Chen-Yi LEE  

Publication
IEICE TRANSACTIONS on Communications   Vol.E86-B   No.7   pp.2190-2192
Publication Date: 2003/07/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Communication Devices/Circuits
Keyword: 
active inductor,  RC feedback,  internal loss,  Q-value,  

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Summary: 
A novel RF CMOS high Q-value active inductor is proposed in this work by using simple cascode RC feedback compensation technique. The performance of this active inductor has maximum Q-value about 1.2E6, inductance value from 3.5 nH to 4.5 nH and 3E-5Ω of minimum total equivalent loss, in the range of 1.2 GHz to 2 GHz.