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An Equivalent MOSFET Cell Using Adaptively Biased Source-Coupled Pair
Hiroki SATO Akira HYOGO Keitaro SEKINE
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/02/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
MOS analog circuit, threshold voltage, source-coupled pair, adaptively bias technique,
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The square-law characteristics of MOSFET in the saturation region have a parameter of threshold voltage VT. However, it introduces some complexities to the circuit design since it depends on kinds of MOS technology and cannot be controlled easily. In this paper, we show an equivalent MOSFET cell which has VT-programming capability and some application instances based on it. The simulation is carried out using CMOS 0.8 µm n-well technology and the results have shown the feasibility of the proposed structure.