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CMOS Open Defect Detection by Supply Current Measurement under Time-Variable Electric Field Supply
Masaki HASHIZUME Masahiro ICHIMIYA Hiroyuki YOTSUYANAGI Takeomi TAMESADA
IEICE TRANSACTIONS on Information and Systems
Publication Date: 2002/10/01
Print ISSN: 0916-8532
Type of Manuscript: Special Section PAPER (Special Issue on Test and Verification of VLSI)
Category: Current Test
open defect, CMOS, supply current test, electric field,
Full Text: PDF(1.1MB)>>
In this paper, a new test method is proposed for detecting open defects in CMOS logic ICs. The method is based on supply current of ICs generated by supplying time-variable supply voltage and electric field from the outside of the ICs. Also, test input vectors for the test method are proposed and it is shown that they can be generated more easily than functional test methods based on stuck-at fault models. The feasibility of the test is examined by some experiments. The empirical results promise us that by using the method, open defects in CMOS ICs can be detected.