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IDDQ Test Time Reduction by High Speed Charging of Load Capacitors of CMOS Logic Gates
Masaki HASHIZUME Teppei TAKEDA Masahiro ICHIMIYA Hiroyuki YOTSUYANAGI Yukiya MIURA Kozo KINOSHITA
IEICE TRANSACTIONS on Information and Systems
Publication Date: 2002/10/01
Print ISSN: 0916-8532
Type of Manuscript: Special Section PAPER (Special Issue on Test and Verification of VLSI)
Category: Current Test
IDDQ sensor, CMOS, IDDQ test, bridging fault,
Full Text: PDF(690.4KB)>>
In this paper, a useful technique is proposed for realizing high speed IDDQ tests. By using the technique, load capacitors of the CMOS logic gates can be charged quickly, whose output logic values change from L to H by applying a test input vector to a circuit under test. The technique is applied to built-in IDDQ sensor design and external IDDQ sensor design. It is shown experimentally that high speed IDDQ tests can be realized by using the technique.