Publication IEICE TRANSACTIONS on ElectronicsVol.E85-CNo.8pp.1588-1595 Publication Date: 2002/08/01 Online ISSN: DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits) Category: Keyword: voltage reference, CMOS, low voltage, SOI,
Full Text: PDF(819.1KB)>>
Summary: A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530 16.8 mV (3σ), and can operate at a supply voltage as low as 0.6 V. The measured temperature coefficient is 0.02 0.06 mV/ (3σ).