Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor

Tetsuya UEMURA  Toshio BABA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.7   pp.1486-1490
Publication Date: 2002/07/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
multiple-valued logic,  T-gate,  flip flop,  tunnel transistor,  NDR,  

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Summary: 
A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.