Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model

Daijiro SUMINO
Yasuhisa OMURA

IEICE TRANSACTIONS on Electronics   Vol.E85-C    No.7    pp.1443-1450
Publication Date: 2002/07/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
thermal noise,  silicon-on-insulator,  MOSFET,  transmission-line model,  

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The radio-frequency thermal noise in fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. It is shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because of smaller channel capacitance.