Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System

Yuri KUSAKARI  Masatoshi MORIKAWA  Kazunori ONOZAWA  Iwamichi KOHJIRO  Isao YOSHIDA  

IEICE TRANSACTIONS on Electronics   Vol.E85-C    No.7    pp.1436-1442
Publication Date: 2002/07/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
GSM,  RF power MOSFET,  0.45-µm LSI process,  power-added efficiency,  

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A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-µm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-µm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ωmm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (Pout) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (ηadd) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.