A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance

Mitsuo NAKAMURA  Hideki SHIMA  Toshimasa MATSUOKA  Kenji TANIGUCHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.7   pp.1428-1435
Publication Date: 2002/07/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
voltage controlled oscillator,  wireless communication,  CMOS,  SOI,  double-tuning,  

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Summary: 
For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.