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Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit
Shintaro SHINJO Kazutomi MORI Hiroyuki JOBA Noriharu SUEMATSU Tadashi TAKAGI
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
microwave, power amplifier, heterojunction bipolar transistor (HBT), SiGe, bias circuit,
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An L-band low quiescent current and low distortion SiGe heterojunction bipolar transistor (HBT) driver amplifier having a self base bias control circuit is described. Since the size of this bias circuit is small and it does not need an external control circuit, it is easy to be integrated with the driver amplifier on a single chip. According to the output power level, the self base bias control circuit, which is the combination of a constant base voltage circuit and p-metal oxide semiconductor (MOS) FET current mirror with a constant current source, automatically controls the base voltage, and allows low quiescent current at low output power level and low distortion at high output power level. The simulated results show that the driver amplifier having the self base bias control circuit achieves 1 dB power compression point (P1 dB) improvement of 2.4 dB compared with the driver amplifier having a conventional constant base voltage under the same quiescent current condition. The fabricated driver amplifier with the proposed bias circuit shows high P1 dB of 15.0 dBm with low quiescent current of 15.3 mA.