Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances

Belinda PIERNAS  Kenjiro NISHIKAWA  Kenji KAMOGAWA  Ichihiko TOYODA  

IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.7   pp.1394-1403
Publication Date: 2002/07/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
three-dimensional,  MMIC,  silicon,  masterslice,  single-chip transceiver,  

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This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.