Electrical and Emitting Properties of Organic Electroluminescent Diodes with Nanostructured Cathode Buffer-Layers of Al/Alq3 Ultrathin Films

Kazunari SHINBO  Eigo SAKAI  Futao KANEKO  Keizo KATO  Takahiro KAWAKAMI  Toyoyasu TADOKORO  Shinichi OHTA  Rigoberto C. ADVINCULA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.6   pp.1233-1238
Publication Date: 2002/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Electronic Devices
Keyword: 
organic light emitting diode (OLED),  buffer layer,  Schottky barrier,  Alq3,  TPD,  

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Summary: 
Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.