Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET

Masafumi TSUTSUI  Toshiaki NAGAI  Masahiro ASADA  

IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.5   pp.1191-1199
Publication Date: 2002/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
vertical transistor,  Schottky barrier,  Schottky source/drain transistor,  PtSi,  silicide,  

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We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with tOX = 1 nm and tSi = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.