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A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
test structure, MOSFET, hot carrier, photoemission,
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A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.