A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs

Toshihiro MATSUDA  Mari FUNADA  Takashi OHZONE  Etsumasa KAMEDA  Shinji ODANAKA  Kyoji TAMASHITA  Norio KOIKE  Ken-ichiro TATSUUMA  

IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.5   pp.1125-1133
Publication Date: 2002/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
test structure,  MOSFET,  hot carrier,  photoemission,  

Full Text: PDF>>
Buy this Article

A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.