Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's

Hitoshi AOKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.2   pp.408-414
Publication Date: 2002/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
flicker noise,  1/f noise,  simulation,  SPICE,  characterizations,  

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Summary: 
In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.