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Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs
Natsumi UEDA Masato TACHIBANA Norihiro IWAI Tatsuyuki SHINAGAWA Maiko ARIGA Yasumasa SASAKI Noriyuki YOKOUCHI Yasukazu SHIINA Akihiko KASUKAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
oxide confined VCSEL, transverse mode, dielectric aperture, thermal resistance, AlAs,
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The methods for the transverse mode control and temperature characteristics improvement in 850 nm oxide confined vertical cavity surface emitting lasers (VCSELs) were investigated. For transverse mode control, dielectric aperture was demonstrated to suppress higher order modes. Substitution of AlAs for Al0.9Ga0.1As in partial bottom DBR was demonstrated to reduce thermal resistance of the devices and to enable operation in high temperature of 85.