High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate


IEICE TRANSACTIONS on Electronics   Vol.E85-C   No.12   pp.2041-2045
Publication Date: 2002/12/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
field-modulating plate,  InGaP,  field effect transistor (FET),  intermodulation distortion,  

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This paper describes high power density and low distortion characteristics of a novel InGaP channel field-modulating plate FET (InGaP FP-FET) under high voltage operation of over 50 V. The developed InGaP FP-FET exhibited an extremely high breakdown voltage of 100 V with an impact ionization coefficient about 103 times smaller than that of GaAs. These superior breakdown characteristics indicate that the InGaP FP-FET is one of the most desirable device structures for high-voltage high-power operation. The InGaP FP-FET delivered an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias voltage of 55 V. As power operation moves from class A to class AB, both 3rd-order intermodulation distortion (IM3) and power-added efficiency (PAE) at higher output-power region were improved, resulting from a suppressed gate leakage current near the power saturation point. These results promise that the developed InGaP FP-FET is suited for applications in which both high efficiency and low distortion are required.