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Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET
Satoshi MAKIOKA Yoshiharu ANDA Daisuke UEDA
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
switch IC, GaAs, multi-gate, EO probe,
Full Text: PDF(344.1KB)>>
The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.