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An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique
Yukio IKEDA Kazutomi MORI Shintaro SHINJO Fumimasa KITABAYASHI Akira OHTA Tadashi TAKAGI Osami ISHIDA
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
microwave, amplifier, transistor, PHEMT, distortion, efficiency,
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An L-Band high efficiency and low distortion multi-stage amplifier using self phase distortion compensation technique is presented. In this amplifier, the bias condition of the driver-stage transistor is tuned to compensate the phase distortion of the power-stage transistor, and the load and source impedances of the driver-stage and power-stage transistors are optimized to achieve the maximum efficiency with a specified adjacent channel leakage power (ACP) for multi-stage amplifier. The developed amplifier achieves a power added efficiency (Eadd) of 42.8% and an output power (Pout) of 26.8 dBm with an ACP of -38 dBc at 1.95 GHz for wide-band code-division multiple-access (W-CDMA) cellular phones.