Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO2

Toshihiro MATSUDA
Masaharu KAWABE
Hideyuki IWATA
Takashi OHZONE

IEICE TRANSACTIONS on Electronics   Vol.E85-C    No.11    pp.1895-1904
Publication Date: 2002/11/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays)
Category: EL Displays
MOS capacitor,  electroluminescence,  Si-implantation,  SiO2,  

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Electroluminescence (EL) under alternating-current (ac) operation is first reported for n+-polysilicon/SiO2/p-Si MOS capacitors with 50 nm Si-implanted SiO2. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of visible light emitting device.