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Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs
Hiromichi TAKAOKA Yoshinobu SATOU Takaomi SUZUKI Takuya SASAKI Hiroshi TANABE Hiroshi HAYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays)
Category: Active Matrix Displays
excimer laser, crystallization, poly-Si, grain, lateral growth, TFT,
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We have successfully produced laterally-grown grains on large (300 350 mm) glass substrates by means of a newly developed excimer laser crystallization system that features a high-precision mask stage and an auto-focusing system. The original grains were produced with a steep beam edge and their lateral growth was extended by repeated irradiation and translation. TFTs fabricated with these extended grains were found to have mobilities that remained almost constant at 270 cm2/Vs (n-ch. TFTs) and 230 cm2/Vs (p-ch. TFTs) over a wide range of laser fluence (400-600 mJ/cm2).