Circuit Simulation Models for Coming MOSFET Generations

Mitiko MIURA-MATTAUSCH  Hiroaki UENO  Hans Juergen MATTAUSCH  Shigetaka KUMASHIRO  Tetsuya YAMAGUCHI  Kyoji YAMASHITA  Noriaki NAKAYAMA  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E85-A    No.4    pp.740-748
Publication Date: 2002/04/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
MOSFET model,  surface potential,  charge based modeling,  sub-100 nm technology,  

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Summary: 
The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.