Nonlinear Analysis of Multiple Ion-Implanted GaAs FETs Using Volterra Series Approach


IEICE TRANSACTIONS on Electronics   Vol.E84-C    No.9    pp.1215-1226
Publication Date: 2001/09/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
GaAs FET,  ion-implantation,  nonlinear analysis,  intermodulation distortion,  Volterra series,  

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A nonlinear Volterra-series analysis of multiple ion-implanted GaAs FETs is given that relates carrier profile parameters of ion-implantation to nonlinear rf characteristics of a FET. Expressions for nonlinear coefficients of transconductance are derived from drain current-voltage characteristics of a multiple ion-implanted FET. Nonlinear transfer functions (NLTFs) are then obtained using Volterra series approach. Using these NLTFs third-order intermodulation distortion and power gain are explicitly given. A good agreement has been found between the calculation and the measurement for a medium power GaAs FET with a total gate width of 800 µm operated at 10-dB back off, verifying the usefulness of the present analysis.