Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices

Jian HU  Janos HAJTO  Anthony J. SNELL  Mervyn J. ROSE  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.9   pp.1197-1201
Publication Date: 2001/09/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
amorphous silicon,  memory switching,  tunnelling,  conducting filament,  

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Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.