Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot

Masumi SAITOH  Toshiro HIRAMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.8   pp.1071-1076
Publication Date: 2001/08/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
silicon single-electron transistor,  ultra-small quantum dot,  quantum level spacing,  fine structures,  negative differential conductance,  

Full Text: PDF(1.3MB)>>
Buy this Article



Summary: 
We analyze electron transport of silicon single-electron transistors (Si SETs) with an ultra-small quantum dot using a master-equation model taking into account the discreteness of quantum levels and the finiteness of scattering rates. In the simulated SET characteristics, aperiodic Coulomb blockade oscillations, fine structures and negative differential conductances due to the quantum mechanical effects are superimposed on the usual Coulomb blockade diagram. These features are consistent with the previously measured results. Large peak-to-valley current ratio of negative differential conductances at room temperature is predicted for Si SETs with an ultra-small dot whose size is smaller than 3 nm.