Si Single-Electron Transistors with High Voltage Gain

Yukinori ONO  Kenji YAMAZAKI  Yasuo TAKAHASHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.8   pp.1061-1065
Publication Date: 2001/08/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
single-electron transistor,  silicon on insulator,  quantum device,  

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Summary: 
Si single-electron transistors with a high voltage gain at a considerably high temperature have been fabricated by vertical pattern-dependent oxidation. The method enables the automatic formation of very small tunnel junctions having capacitances of less than 1 aF. In addition, the use of a thin (a few ten nanometers thick) gate oxide allows a strong coupling of the island to the gate, which results in a gate capacitance larger than the junction capacitances. It is demonstrated at 27 K that an inverting voltage gain, which is governed by the ratio of the gate capacitance to the drain tunnel capacitance, exceeds 3 under constant drain current conditions.