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Si Single-Electron Transistors with High Voltage Gain
Yukinori ONO Kenji YAMAZAKI Yasuo TAKAHASHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Nanodevices)
single-electron transistor, silicon on insulator, quantum device,
Full Text: PDF(180.3KB)>>
Si single-electron transistors with a high voltage gain at a considerably high temperature have been fabricated by vertical pattern-dependent oxidation. The method enables the automatic formation of very small tunnel junctions having capacitances of less than 1 aF. In addition, the use of a thin (a few ten nanometers thick) gate oxide allows a strong coupling of the island to the gate, which results in a gate capacitance larger than the junction capacitances. It is demonstrated at 27 K that an inverting voltage gain, which is governed by the ratio of the gate capacitance to the drain tunnel capacitance, exceeds 3 under constant drain current conditions.