Scaling Limit of the MOS Transistor--A Ballistic MOSFET--

Kenji NATORI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.8   pp.1029-1036
Publication Date: 2001/08/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
ballistic MOSFET,  scaling limit,  current-voltage characteristics,  MOSFET,  injection velocity,  

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Summary: 
The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.