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A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design
Kohei FUJII Fadhel M. GHANNOUCHI Toshiyuki YAKABE Hatsuo YABE
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/07/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Techniques for Constructing Microwave Simulators--Design and Analysis Tools for Electromagnetic Fields, Circuits, and Antennas--)
Category: Modeling of Nonlinear Microwave Circuits
nonlinear model, GaAs FET, simulation, large signal,
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This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.