A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET

Kazunori KAWAMOTO  Kenji KOHNO  Yasushi HIGUCHI  Seiji FUJINO  Isao SHIRAKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.6   pp.823-831
Publication Date: 2001/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
LDMOSFET,  ESD,  static discharge,  thick SOI,  

Full Text: PDF(1.7MB)>>
Buy this Article




Summary: 
This paper proposes an LDMOSFET (Lateral Double-diffused MOSFET) that has the robustness against the hardest ESD (Electrostatic Discharge) requirement for automobile ECUs (Electronic Control Units) of discharging 25 kV 150 pF through 150 ohm 1 µH without external protecting circuits. The basic idea to achieve this is to add a novel discharge circuit to an LDMOSFET, which turns on when Human Body Model (HBM) type ESD is applied, and to consume the discharge energy in SOA (Safe Operating Area) in the LDMOSFET, avoiding localized current crowding of a parasitic bipolar transistor which causes the conventional ESD device failure. First, dynamics of current crowding when a grounded gate LDMOSFET is exposed to ESD stress is described by means of a circuit level SPICE simulation on a parallel distributed device model. Then a novel ESD turn-on LDMOSFET with a discharge MOSFET is proposed, which has ESD robustness of 25 kV. Finally the ESD measurements of the new device are shown to be in good accordance with estimation and to satisfy the target.