Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi2Ta2O9/Pt Capacitor

Young Min KANG  Seaung Suk LEE  Beelyong YANG  Choong Heui CHUNG  Hun Woo KYE  Suk Kyoung HONG  Nam Soo KANG  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.6   pp.757-762
Publication Date: 2001/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric,  nonvolatile,  memory,  FeRAM,  imprint,  reliability,  

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Summary: 
Effects of imprint on signal margin in FeRAM with Pt/SrBi2Ta2O9/Pt capacitors have been investigated. Imprint, induced during high temperature storage, significantly reduced the signal margin and hence determines lifetime of FeRAM. Initial signal margin of 470 mV is reduced to 290 mV after storage at 175C for 96 hours. From the reduction rate of the signal margin, it is estimated that imprint lifetime of the FeRAM is more than 10 years even though the storage temperature is 175C.