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Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi2Ta2O9/Pt Capacitor
Young Min KANG Seaung Suk LEE Beelyong YANG Choong Heui CHUNG Hun Woo KYE Suk Kyoung HONG Nam Soo KANG
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories)
ferroelectric, nonvolatile, memory, FeRAM, imprint, reliability,
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Effects of imprint on signal margin in FeRAM with Pt/SrBi2Ta2O9/Pt capacitors have been investigated. Imprint, induced during high temperature storage, significantly reduced the signal margin and hence determines lifetime of FeRAM. Initial signal margin of 470 mV is reduced to 290 mV after storage at 175C for 96 hours. From the reduction rate of the signal margin, it is estimated that imprint lifetime of the FeRAM is more than 10 years even though the storage temperature is 175C.