Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration

Atsushi NOYA  Mayumi B. TAKEYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.5   pp.704-706
Publication Date: 2001/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Materials
metallization,  MOS,  gate electrode,  ZrN,  

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An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.