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Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration
Atsushi NOYA Mayumi B. TAKEYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/05/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Materials
metallization, MOS, gate electrode, ZrN,
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An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.