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Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach
Chang-Zheng SUN Bing XIONG Guo-Peng WEN Yi LUO Tong-Ning LI Yoshiaki NAKANO
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
photonic integrated circuit, distributed feedback semiconductor laser, gain-coupled DFB laser, electroabsorption modulator,
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The effect of wavelength detuning on the device performance of identical-epitaxial-layer (IEL) electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers is studied in detail. Based on the lasing behavior of integrated devices with different amount of wavelength detuning and the photocurrent spectra under different reverse biases, the optimal wavelength detuning is experimentally determined to be around 30-40 nm for our IEL integrated devices. By adopting gain-coupled DFB laser section, integrated devices with optimal wavelength detuning have demonstrated excellent single mode performances. The extinction ratio is measured to be greater than 15 dB at -3 V, and the modulation bandwidth is around 8 GHz.