Polarization Control of VCSEL on (311)B Substrate and Its Effects on Transmission Characteristics

Toshiaki KAGAWA  Osamu TADANAGA  Hiroyuki UENOHARA  Kouta TATENO  Chikara AMANO  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.3   pp.351-357
Publication Date: 2001/03/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Optical Interconnects/Optical Signal Processing)
Category: Device
VCSEL,  polarization,  (311)B substrate,  BER,  

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VCSEL output light polarization was controlled by fabricating devices on (311) substrate. Stability was improved by introducing compressive strain to the quantum wells in the active layer. In experiments, the power penalty due to polarization-dependent loss in the transmission line was negligible for both VCSELs with unstrained and strained quantum well active layers on (311)B substrate. The sensitivity at 2.5 Gbps was improved in a device with a strained active layer because the intensity noise due to the polarization instability was reduced. These characteristics are discussed and compared to calculated results.