A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays

Kazunori KAWAMOTO  Hitoshi YAMAGUCHI  Hiroaki HIMI  Seiji FUJINO  Isao SHIRAKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.2   pp.260-266
Publication Date: 2001/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOS,  thick SOI,  trench isolation,  EL driver,  LDMOS,  

Full Text: PDF(1.3MB)>>
Buy this Article




Summary: 
EL (Electroluminescent) displays have been applied to automobiles, as their images are very clear and bright. High voltage, high integration and low power dissipation ICs are needed to drive these devices. To meet this, high voltage CMOS ICs using SOI (Silicon On Insulator) substrates are chosen as the driving devices. In this paper, an isolation structure between the output CMOS devices, of high density and high voltage is proposed. Conventional trench dielectric isolation shows degradation of a break down voltage with short distance from trench to source. In this work, the authors make clear the electric field distribution near the isolation, and offer a novel structure of "Field-plate Trench Isolation," which enables to relax the electric field on the silicon surface by shifting a part of electric field into surface oxide. Finally, operation of high voltage and high density, a 200-volt and 32-channel, EL display driver for automotive display panel is confirmed.