Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application

Yasuo YAMAGUCHI  Takashi IPPOSHI  Kimio UEDA  Koichiro MASHIKO  Shigeto MAEGAWA  Masahide INUISHI  Tadashi NISHIMURA  

IEICE TRANSACTIONS on Electronics   Vol.E84-C    No.12    pp.1735-1745
Publication Date: 2001/12/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Systems with New Concepts)
SOI,  SOC,  partially depleted,  isolation,  

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Partially depleted SOI technology with body-tied hybrid trench isolation was developed in order to counteract floating body effects which offers negative impact on the drive current of transistors and the stability of circuit operation while maintaining SOI's specific merits such as high speed operation and low power consumption. The feasibility of this technology and its superior soft error effects were demonstrated by a fully functional 4M-bit SRAM. Its radio frequency characteristics were also evaluated and it was verified that high-performance transistors and passive elements can be realized by the combination of the SOI structure and a high-resistivity substrate. Moreover, its application to a 2.5 GHz digital IC for optical communication was also demonstrated. Thus it was proven that the body-tied SOI devices with the hybrid trench isolation is suitable to realize intelligent and reliable high-speed system-on-a chip integrating various IP's.