For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
Naoko ONO Keiichi YAMAGUCHI Minoru AMANO Masayuki SUGIURA Yuji ISEKI Eiji TAKAGI
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
BCB, thin-film layer, V-band, HEMT, MMIC,
Full Text: PDF>>
The authors have developed V-band high electron mobility transistor (HEMT) MMICs adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers, which can change the thickness of arbitrary parts on a circuit, are used for these MMICs, both a thin-film microstrip (TFMS) line, offering the advantages of great flexibility in layout and small size, and a coplanar waveguide (CPW), offering the advantage of low loss, can be used according to the purpose of the MMIC. Here we introduce the four types of V-band MMICs that we fabricated: low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), and power amplifier (PA). The optimum transmission lines were chosen from the TFMS line and the CPW for these MMICs. Miniaturization of the LNA MMIC and the mixer MMIC were attained by adopting the TFMS line, whereas adoption of the CPW enabled the VCO MMIC to achieve high performance. These results indicate that it is important to choose the optimum transmission line according to the purpose of the circuit function for each MMIC. It was confirmed that these newly developed MMICs using the BCB thin-film dielectric layers are attractive for millimeter-wave applications.