SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production

Konrad WOLF  Wolfgang KLEIN  Norbert ELBEL  Adrian BERTHOLD  Sonja GRONDAHL  Thomas HUTTNER  Stefan DREXL  Rudolf LACHNER  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1399-1407
Publication Date: 2001/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
SiGe,  selective epitaxy,  bipolar,  BICMOS,  

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We report the process flow and technological features of Infineons' 75 GHz bipolar technology, which is characterized by a double-poly self-aligned transistor structure and a SiGe base, grown by selective epitaxy. The dependence of the epitaxial deposition on growth conditions and the influence of layout on the growth process is discussed, especially for different kinds of reticles: bipolar-ICs, BICMOS-ICs and discrete semiconductors. Finally, our monitoring concept for the control of the selective SiGe epitaxy is presented and compared with alternative methods of process control.