InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter

Toshiki ARAI  Shigeharu YAMAGAMI  Yoshifumi OKUDA  Yoshimichi HARADA  Yasuyuki MIYAMOTO  Kazuhito FURUYA  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1394-1398
Publication Date: 2001/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
InP,  HBT,  narrow emitter,  

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Fabrication process for narrow emitter along 010 direction in heterojunction bipolar transistor fully drawn by electron beam lithography was studied. Emitter structure of a 100 nm width was formed by using epitaxial structure with 30-nm-thick InP layer of emitter. Transistor operation of devices with 0.5-µ m-wide emitter was confirmed. This process can be applied to a buried metal heterojunction bipolar transistor (BM-HBT) with narrow emitter, resulting in high-speed operation of BM-HBT.