Publication IEICE TRANSACTIONS on ElectronicsVol.E84-CNo.10pp.1389-1393 Publication Date: 2001/10/01 Online ISSN: DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: InGaP/GaAs HBT, AlGaAs/GaAs HBT, GaInNAs, bipolar transistor, turn-on voltage,
Full Text: PDF>>
Summary: We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50 mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels ( 3 1019 cm-3) and dc current gain (βmax up to 100) are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750 Ω/. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.