Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes

Keiichi MURAYAMA  Masaaki NISHIJIMA  Manabu YANAGIHARA  Tsuyoshi TANAKA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1379-1382
Publication Date: 2001/10/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBT,  bias circuit,  temperature compensation,  

Full Text: PDF>>
Buy this Article




Summary: 
The temperature compensation technique of InGaP/GaAs power heterojunction bipolar transistor (HBT) with novel bias circuit using Schottky diodes has been developed. The variation in the quiescent current to the temperature is less than 30% from -30C to 90C by this technique, where that is about 125% by the conventional bias circuit. The RF performance of the power HBT MMIC with novel bias circuit shows flat temperature characteristics enough to be used for power application of wireless communications.