For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes
Keiichi MURAYAMA Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
InGaP/GaAs HBT, bias circuit, temperature compensation,
Full Text: PDF>>
The temperature compensation technique of InGaP/GaAs power heterojunction bipolar transistor (HBT) with novel bias circuit using Schottky diodes has been developed. The variation in the quiescent current to the temperature is less than 30% from -30C to 90C by this technique, where that is about 125% by the conventional bias circuit. The RF performance of the power HBT MMIC with novel bias circuit shows flat temperature characteristics enough to be used for power application of wireless communications.