For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters
William Ross McKINNON Rachid DRIAD Craig STOREY Anthony RENAUD Sean P. McALISTER Ted GARANZOTIS Anthony J. SPRINGTHORPE
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
heterojunction bipolar transistors, indium phosphide,
Full Text: PDF>>
The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.