Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters

William Ross McKINNON  Rachid DRIAD  Craig STOREY  Anthony RENAUD  Sean P. McALISTER  Ted GARANZOTIS  Anthony J. SPRINGTHORPE  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1373-1378
Publication Date: 2001/10/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
heterojunction bipolar transistors,  indium phosphide,  

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Summary: 
The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.