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A Light-Controlled Oscillator Using InAlAs/InGaAs High Electron Mobility Transistor
Yasuyuki MIYAKE Koichi HOSHINO
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
MMIC oscillator, light-controlled oscillator, radio on fiber, frequency-shift keying,
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In this report we demonstrate the characteristics of the opt-electrical transducer that is newly designed for a fiber-optic wireless access system. This transducer consists of a monolithic microwave integrated circuit (MMIC) oscillator whose oscillation frequency is over 30 GHz. The active element of the oscillator is an InAlAs/InGaAs high electron mobility transistor (HEMT). The shift of frequency is observed when we illuminate 1.55 µm wavelength light onto the HEMT area. The size of the frequency shift is -150 MHz/mW, and it does not change as a function of gate bias conditions. We also confirm that the oscillator is able to respond with an optical signal of 500 MHz, which is sufficiently fast to achieve 156 Mbit/s communication. If this transducer is introduced into the base station (BS) of a fiber-optic wireless access system, a high-speed optical modulator no longer has to be incorporated into the control station. As a result, the configuration of the system becomes simpler than that of Radio on Fiber. We constructed a system that adopts the frequency shift keying technique with application of the transducer into the BS and then performed a transmission experiment at 5 Mbit/s. The demodulated data is sufficiently clear to distinguish high from low. Therefore, we can put forth that the fabricated transducer is a promising candidate as a device for the BS of a fiber-optic millimeter-wave wireless access system.